학술논문
Diffusion of ion-implanted phosphorus within thermally grown SiO2 in O2 ambient.
Document Type
Article
Author
Source
Subject
*SILICA
*ION implantation
*PHOSPHORUS
*
*
Language
ISSN
0021-8979
Abstract
Presents a study which analyzed the behavior of ion-implanted phosphorus in silicon dioxide by secondary ion-mass spectrometry. Experiment; Results and discussion; Conclusion.