학술논문
Characterization of GaAs self-aligned refractory-gate metal-semiconductor field-effect transistor (MESFET) integrated circuits.
Document Type
Article
Author
Source
Subject
*GALLIUM arsenide
*INTEGRATED circuits
*SEMICONDUCTORS
*METAL semiconductor field-effect transistors
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Language
ISSN
0021-8979
Abstract
Focuses on a study that characterized gallium arsenide metal-semiconductor field effect transistors and other integrated-circuit elements by including extensive process test sites on wafers with digital logic and memory circuits. Overview of vertical structure; Process characterization test results Summary.