학술논문
Model-based mask verification on 45nm logic gate masks. (cover story)
Document Type
Article
Author
Source
Subject
*STRUCTURAL equation modeling
*SEMICONDUCTOR wafers
*MEASUREMENT
*LOOPS (Group theory)
*INTEGRATED circuit verification
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Language
ISSN
0038-111X
Abstract
The article reports on a study regarding the benefits of using mask bias model (MBM) in optical proximity correction (OPC) hot spot verification loops. It includes a review of MBM conducted by the Lithography Manufacturing Check (LMC) for SEM measurements and contour measurements. It shows that MBM has closer conformity to the actual SEM images of the wafer. It also suggests that model-based mask verification can give accurate hot spot detection and better filtering of false detections.