학술논문
Investigation of the internal amplification effect in planar p-silicon structures.
Document Type
Article
Author
Source
Subject
*Silicon
*Detectors
*Radiation
*Silicon diodes
*Porous silicon
*Ion mobility spectroscopy
*Ionizing radiation
*
*
*
*
*
*
Language
ISSN
0020-4412
Abstract
The results of investigation of n ++ p + pp + silicon detector structures manufactured from p silicon are presented. These detectors demonstrate the effect of internal amplification of a signal (with a gain of 20) with retained properties of the detector as a spectrometric device. An efficient lowering of the energy level for the detected ionizing radiation is demonstrated. [ABSTRACT FROM AUTHOR]