학술논문
Study of the structural and optoelectronic properties of ZnSn1-x Sbx O3 thin films.
Document Type
Article
Author
Source
Subject
*STANNIC oxide
*CHARGE carrier mobility
*ATOMIC force microscopy
*RADIOFREQUENCY sputtering
*THIN films
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Language
ISSN
0947-8396
Abstract
Thin films of zinc stannate, both pure and doped with antimony, were synthesized via the RF sputtering method. X-ray diffraction patterns showed SnO 2 and Zn 2 SnO 4 phases. Atomic force microscopy analysis demonstrated that doping resulted in a reduction of the films roughness from 2.48 to 1.07 nm, attributed to an increase in grain density. Photoluminescence spectra exhibited a broad visible emission band with a peak centered around 557 nm. Transparency in the visible region was high for the films, reaching 80%. The electrical studies revealed that the resistivity decreased with doping upto 8.54 × 10 - 2 Ω cm due to the increase in charge carriers concentration and mobility. [ABSTRACT FROM AUTHOR]