학술논문
Surface oxygen vacancy engineering on TiO2 (101) via ALD technology for simultaneously enhancing charge separation and transfer.
Document Type
Article
Author
Source
Subject
*CHARGE transfer
*ATOMIC layer deposition
*SURFACE charges
*TITANIUM oxides
*ENGINEERING
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Language
ISSN
1359-7345
Abstract
Titanium oxide molecular layers containing extensive SOV content (11.4–16.2%) have been constructed on (101) TiO2 nanotubes through a precisely controlled atomic layer deposition technique, in which the charge separation efficiency and surface charge transfer efficiency are increased to 28.2% and 89.0%, respectively, about 17 and 2 times those of the initial TiO2 nanotubes. [ABSTRACT FROM AUTHOR]