학술논문
Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2 O3 Substrate during Hydride Vapor Phase Epitaxy.
Document Type
Article
Source
Subject
*EPITAXY
*GALLIUM nitride
*HYDRIDES
*GASES
*VAPORS
*RESONANT ultrasound spectroscopy
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Language
ISSN
1063-7826
Abstract
We report on the fabrication of nonpolar GaN(11‒20) structures by hydride vapor phase epitaxy using an AlN buffer layer synthesized by metalorganic vapor-phase epitaxy on an r-Al2O3 substrate. It is shown that the elastic stresses in the GaN(11‒20)/r-Al2O3 structure in the directions of the c and a axes of the layer have different values, correlate with the full widths at half maximum of the rocking curves in the X-ray diffraction spectra in these directions, and are caused by the anisotropy of the thermal expansion coefficients of the layer and substrate lattices. [ABSTRACT FROM AUTHOR]