학술논문

A carrier escape study from InP/InGaAs single quantum well solar cells.
Document Type
Article
Source
Journal of Applied Physics. 1/15/1998, Vol. 83 Issue 2, p877. 5p. 1 Chart, 7 Graphs.
Subject
*QUANTUM wells
Language
ISSN
0021-8979
Abstract
Looks at a carrier escape study from InP/AlGaAs single quantum well structures. Indications of the photoluminescence from the InGaAs wells; Use of an estimated nonradiative efficiency of the device; Insight on the relevance to an application.