학술논문
Vertical GaN Schottky Diodes Grown on Highly Conductive Ammono-GaN Substrate.
Document Type
Article
Author
Source
Subject
*GALLIUM nitride
*SCHOTTKY barrier diodes
*METAL organic chemical vapor deposition
*ELECTRIC conductivity
*SUBSTRATES (Materials science)
*EPITAXY
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Language
ISSN
0587-4246
Abstract
We report on vertical n-GaN high voltage Schottky diodes grown by metal organic chemical vapour deposition and hydride vapour phase epitaxy on conductive ammono-GaN substrate. The thermionic emission current model has been applied for diodes analysis and parameters extraction. Finally, we demonstrate that breakdown voltage as high as 670 V for such structures can be achieved. [ABSTRACT FROM AUTHOR]