학술논문
Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric.
Document Type
Article
Author
Source
Subject
*MODULATION-doped field-effect transistors
*DIELECTRICS
*METAL oxide semiconductor field-effect transistors
*ANNEALING of semiconductors
*ELECTRON transport
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Language
ISSN
0018-9383
Abstract
AlGaN/GaN high-electron mobility transistors (HEMTs) and metal–oxide–semiconductor (MOS)-HEMTs using HfO2 as a gate dielectric have been analyzed at room temperature, after short thermal annealing (STA) and thermal cycle tests, during off-state electrical step stress, high-temperature reverse bias (HTRB), and positive bias temperature instability (PBTI) tests. The results showed that the leakage current in as-fabricated MOS-HEMTs decreased by 106 and the on/off ratio increased by over 104 than the HEMTs. Moreover, it was even higher after an STA test, up to 108, in the MOS-HEMTs, and the surface trapping effects were mitigated, especially if a KOH cleaning was used before HfO2 deposition. The MOS-HEMTs also showed higher electrical stability after off-state step electrical stress, HTRB, and PBTI tests. [ABSTRACT FROM AUTHOR]