학술논문

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발행년	- (예 : 2010-2015)

전체선택

High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate

Conference

Huang, M. L.; Chang, S. W.; Chen, M. K.; Oniki, Y.; Chen, H. C.; Lin, C. H.; Lee, W. C.; Khaderbad, M. A.; Lee, K. Y.; Chen, Z. C.; Tsai, P. Y.; Lin, L. T.; Tsai, M. H.; Hung, C. L.; Huang, T. C.; Lin, Y. C.; Yeo, Y.-C.; Jang, S. M.; Hwang, H. Y.; Wang, Howard C.-H.; Diaz, Carlos H.

2016 IEEE Symposium on VLSI Technology VLSI Technology, 2016 IEEE Symposium on. :1-2 Jun, 2016

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High-Performance PMOS Devices on (110)/ Substrate/Channel with Multiple Stressors

Conference

Wang, Howard C.-H.; Huang, Shih-Hian; Tsai, Ching-Wei; Lin, Hsien-Hsin; Lee, Tze-Liang; Chen, Shih-Chang; Diaz, Carlos H.; Liang, Mong-Song; Sun, Jack Y.-C.

2006 International Electron Devices Meeting Electron Devices Meeting, 2006. IEDM '06. International. :1-4 Dec, 2006

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An atomic level study of multiple co-implantation technology for 32nm and beyond pMOSFETs ultra-shallow junction

Conference

Sun, Yun-Ju; Cheng, Ya-Yun; Wang, Yin-Pin; Yamamoto, Tomonari; Cheng, Chun-Fu; Sia, Shao-Hwang; Chang, Yu-Chia; Chen, Yueh-You; Tsai, Ching-Wei; Sheu, Yi-Ming; Wang, Howard C.-H.

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications VLSI Technology, Systems and Applications (VLSI-TSA), 2011 International Symposium on. :1-2 Apr, 2011

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Characteristics and physical mechanisms of positive bias and temperature stress-induced drain current degradation in HfSiON nMOSFETs

Academic Journal

Chan, Chein-Tai; Tang, Chun-Jung; Wang, Tahui; Wang, Howard C.-H.; Tang, Denny D.

IEEE Transactions on Electron Devices. June 2006, Vol. 53 Issue 6, p1340, 7 p.

Full Text (IEEE) Web of Science JCR 저널정보 Scopus Find it@PNU

A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs--from single electron emission to PBTI recovery transient

Academic Journal

Tahui Wang; Chien-Tai Chan; Chun-Jung Tang; Ching-Wei Tsai; Wang, Howard C.-H.; Min-Hwa Chi; Tang, Denny D.

IEEE Transactions on Electron Devices. May 2006, Vol. 53 Issue 5, p1073, 7 p.

Full Text (IEEE) Web of Science JCR 저널정보 Scopus Find it@PNU

Novel Dual-Metal Gate Technology Using Mo — MoSix Combination.

Academic Journal

Tzung-Lin Li; Wu-Lin Ho; Hung-Bin Chen; Wang, Howard C.-H.; Chun-Yen Chang; Chenming Hu

IEEE Transactions on Electron Devices. Jun2006, Vol. 53 Issue 6, p1420-1426. 7p. 6 Color Photographs, 1 Diagram, 11 Graphs.

Full Text (IEEE) Web of Science JCR 저널정보 Scopus Find it@PNU

Characteristics and Physical Mechanisms of Positive Bias and Temperature Stress-Induced Drain Current Degradation in HfSiON nMOSFETs.

Academic Journal

Chien-Tai Chan; Chun-Jung Tang; Tahui Wang; Wang, Howard C.-H.; Tang, Denny D.

IEEE Transactions on Electron Devices. Jun2006, Vol. 53 Issue 6, p1340-1346. 7p. 4 Color Photographs, 4 Diagrams, 15 Graphs.

Full Text (IEEE) Web of Science JCR 저널정보 Scopus Find it@PNU

Continuous and Precise Work Function Adjustment for Integratable Dual Metal Gate CMOS Technology Using Hf-Mo Binary Alloys.

Academic Journal

Li, Tzung-Lin; Hu, Chia-Hsin; Ho, Wu-Lin; Wang, Howard C.-H.; Chang, Chun-Yen

IEEE Transactions on Electron Devices. Jun2005, Vol. 52 Issue 6, p1172-1179. 8p.

Full Text (IEEE) Web of Science JCR 저널정보 Scopus Find it@PNU

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