학술논문

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발행년	- (예 : 2010-2015)

Kerfless Epitaxial Mono Crystalline Si Wafers With Built-In Junction and From Reused Substrates for High-Efficiency PERx Cells

Academic Journal

Hao, R.; Ravi, T.S.; Siva, V.; Vatus, J.; Kuzma-Filipek, I.; Duerinckx, F.; Recaman-Payo, M.; Aleman, M.; Cornagliotti, E.; Choulat, P.; Russell, R.; Sharma, A.; Tous, L.; Uruena, A.; Szlufcik, J.; Poortmans, J.

IEEE Journal of Photovoltaics IEEE J. Photovoltaics Photovoltaics, IEEE Journal of. 6(6):1451-1455 Nov, 2016

Full Text (IEEE) Web of Science JCR 저널정보 Scopus Find it@PNU

High quality kerfless silicon mono-crystalline wafers and cells by high throughput epitaxial growth.

Conference

Hao, R.; Ravi, T.S.; Siva, V.; Vatus, J.; Miller, D.; Custodio, J.; Moyers, K.

MRS Online Proceedings Library; 2014, Vol. 1666 Issue 1, p48-58, 11p

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Highly selective reactive ion etching applied to the fabrication of low-noise AlGaAs GaAs FET's

Academic Journal

Vatus, J.; Chevrier, J.; Delescluse, P.; Rochette, J.-F.

IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 33(7):934-937 Jul, 1986

Full Text (IEEE) Web of Science JCR 저널정보 Scopus Find it@PNU

Ionic Reactive Etching of GaAs in a Plasma of CCl//2F//2.

Academic Journal

Chaplart, J.; Vatus, J.; Linh, N.T.

In: Vide, les Couches Minces. (Vide, les Couches Minces, August 1983, 38(218))

Scopus Find it@PNU

Notice of Removal: Kerfless epitaxial mono crystalline Si wafers with built-in junction and from reused substrates for high efficiency PERx cells

Conference

Hao, R.; Ravi, T.S.; Siva, V.; Vatus, J.; Kuzma-Filipek, I.; Duerinckx, F.; Recaman-Payo, M.; Aleman, M.; Cornagliotti, E.; Choulat, P.; Russell, R.; Sharma, A.; Tous, L.; Uruena, A.; Szlufcik, J.; Poortmans, J.

In: 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, 2017, :1-3)

Full Text (IEEE) Scopus Find it@PNU

High efficiency solar cells on direct kerfless 156 mm mono crystalline Si wafers by high throughput epitaxial growth

Conference

Hao, R.; Ravi, T.S.; Siva, V.; Vatus, J.; Miller, D.; Custodio, J.; Moyers, K.; Chen, C.-W.; Upadhyaya, A.; Rohatgi, A.

In: 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. (2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014, 15 October 2014, :2978-2982)

Full Text (IEEE) Scopus Find it@PNU

Defects in epitaxial lift-off thin Si films/wafers and their influence on the solar cell performance

Conference

Sopori, B.; Devayajanam, S.; Basnyat, P.; Moutinho, H.; Reedy, R.; VanSant, K.; Ravi, T.S.; Hao, R.; Vatus, J.; Nag, S.

In: Materials Research Society Symposium Proceedings. (Materials Research Society Symposium Proceedings, 2014, 1666)

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CONTROL OF THE GATE RECESS IN GaAs FET's AND AlGaAs/GaAs TEGFET's PROCESS USING REACTIVE ION ETCHING.

Conference

Chaplart, J.; Chevrier, J.; Vatus, J.; Linh, Nuyen T.

In: Electrochemical Society Extended Abstracts. (Electrochemical Society Extended Abstracts, 1984, 84-2:504-505)

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