학술논문

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발행년	- (예 : 2010-2015)

Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress

Academic Journal

Fu, Houqiang; Fu, Kai; Yang, Chen; Liu, Hanxiao; Hatch, Kevin A.; Peri, Prudhvi; Herath Mudiyanselage, Dinusha; Li, Bingjun; Kim, Tae-Hyeon; Alugubelli, Shanthan R.; Su, Po-Yi; Messina, Daniel C.; Deng, Xuguang; Cheng, Chi-Yin; Vatan Meidanshahi, Reza; Huang, Xuanqi; Chen, Hong; Yang, Tsung-Han; Zhou, Jingan; Armstrong, Andrew M.; Allerman, Andrew A.; Yu, Edward T.; Han, Jung; Goodnick, Stephen M.; Smith, David J.; Nemanich, Robert J.; Ponce, Fernando A.; Zhao, Yuji

In Materials Today October 2021 49:296-323

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Anomalous carrier dynamics and localization effects in nonpolar m-plane InGaN/GaN quantum wells at high temperatures

Academic Journal

Huang, Xuanqi; Li, Dongying; Su, Po-Yi; Fu, Houqiang; Chen, Hong; Yang, Chen; Zhou, Jingan; Qi, Xin; Yang, Tsung-Han; Montes, Jossue; Deng, Xuguang; Fu, Kai; DenBaars, Steven P.; Nakamura, Shuji; Ponce, Fernando A.; Ning, Cun-Zheng; Zhao, Yuji

In Nano Energy October 2020 76

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The effect of low-angle off-axis GaN substrate orientation on the surface morphology of Mg-doped GaN epilayers.

Academic Journal

Su, Po-Yi; Liu, Hanxiao; Wang, Shuo; Wu, Zhihao; Liu, Rong; Ponce, Fernando A.

Journal of Applied Physics. 8/7/2020, Vol. 128 Issue 5, p1-9. 9p. 9 Diagrams, 1 Chart, 1 Graph.

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

Influence of substrate misorientation on the optical properties of Mg-doped GaN.

Academic Journal

Liu, Hanxiao; Su, Po-Yi; Wu, Zhihao; Liu, Rong; Ponce, Fernando A.

Journal of Applied Physics. 5/21/2020, Vol. 127 Issue 19, p1-7. 7p. 2 Diagrams, 6 Graphs.

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The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices.

Academic Journal

Fu, Kai; Fu, Houqiang; Deng, Xuguang; Su, Po-Yi; Liu, Hanxiao; Hatch, Kevin; Cheng, Chi-Yin; Messina, Daniel; Meidanshahi, Reza Vatan; Peri, Prudhvi; Yang, Chen; Yang, Tsung-Han; Montes, Jossue; Zhou, Jingan; Qi, Xin; Goodnick, Stephen M.; Ponce, Fernando A.; Smith, David J.; Nemanich, Robert; Zhao, Yuji

Applied Physics Letters. 6/14/2021, Vol. 118 Issue 22, p1-6. 6p.

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Characterization of MOCVD regrown p-GaN and the interface properties for vertical GaN power devices.

Academic Journal

Fu, Kai; Qi, Xin; Fu, Houqiang; Su, Po-Yi; Liu, Hanxiao; Yang, Tsung-Han; Yang, Chen; Montes, Jossue; Zhou, Jingan; Ponce, Fernando A; Zhao, Yuji

Semiconductor Science & Technology. Jan2021, Vol. 36 Issue 1, p1-6. 6p.

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Lateral and vertical growth of Mg-doped GaN on trench-patterned GaN films.

Academic Journal

Su, Po-Yi; Liu, Hanxiao; Yang, Chen; Fu, Kai; Fu, Houqiang; Zhao, Yuji; Ponce, Fernando A.

Applied Physics Letters. 9/8/2020, Vol. 117 Issue 10, p1-4. 4p.

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Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment.

Academic Journal

Yang, Chen; Fu, Houqiang; Su, Po-Yi; Liu, Hanxiao; Fu, Kai; Huang, Xuanqi; Yang, Tsung-Han; Chen, Hong; Zhou, Jingan; Deng, Xuguang; Montes, Jossue; Qi, Xin; Ponce, Fernando A.; Zhao, Yuji

Applied Physics Letters. 8/3/2020, Vol. 117 Issue 5, p1-5. 5p. 1 Color Photograph, 1 Diagram, 2 Graphs, 1 Map.

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Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics.

Academic Journal

Liu, Hanxiao; Fu, Houqiang; Fu, Kai; Alugubelli, Shanthan R.; Su, Po-Yi; Zhao, Yuji; Ponce, Fernando A.

Applied Physics Letters. 2/25/2019, Vol. 114 Issue 8, pN.PAG-N.PAG. 5p. 3 Diagrams, 1 Chart, 2 Graphs.

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