학술논문

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발행년	- (예 : 2010-2015)

A 5V complementary-SiGe BiCMOS technology for high-speed precision analog circuits

Conference

El-Kareh, B.; Balster, S.; Leitz, W.; Steinmann, P.; Yasuda, H.; Corsi, M.; Dawoodi, K.; Dirnecker, C.; Foglietti, P.; Haeusler, A.; Menz, P.; Ramin, M.; Scharnagl, T.; Schiekofer, M.; Schober, M.; Schulz, U.; Swanson, L.; Tatman, D.; Waitschull, M.; Weijtmans, J.W.; Willis, C.

2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE Cat. No.03CH37440) Bipolar/BiCMOS circuits and technology Bipolar/BiCMOS Circuits and Technology Meeting, 2003. Proceedings of the. :211-214 2003

Full Text (IEEE) Find it@PNU

A highly manufacturable 0.25/spl mu/m RF technology utilizing a unique SiGe integration

Conference

Johnson, F.S.; Ai, J.; Dunn, S.; El Kareh, B.; Erdeljac, J.; John, S.; Benaissa, K.; Bellaour, A.; Benna, B.; Hodgson, L.; Hoffleisch, G.; Hutter, L.; Jaumann, M.; Jumpertz, R.; Mercer, M.; Nair, M.; Seitchik, J.; Shen, C.; Schiekofer, M.; Scharnagl, T.; Schimpf, K.; Schulz, U.; Staufer, B.; Stroth, L.; Tatman, D.; Thompson, M.; Williams, B.; Violette, K.

Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212) Bipolar/BiCMOS circuits and technology Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001. :56-59 2001

Full Text (IEEE) Find it@PNU

The effects of thermal nitridation on phosphorus diffusion in strained SiGe and SiGe:C

Academic Journal

Lin, Y.; Xia, G.; Yasuda, H.; Schiekofer, M.

In: Journal of Materials Science. (Journal of Materials Science, 1 February 2016, 51(3):1532-1540)

EBSCOHost PDF Full Text (ProQuest Central) Full Text (Gale Academic Onefile) Web of Science JCR 저널정보 Scopus Find it@PNU

Coupled dopant diffusion and segregation in inhomogeneous SiGe alloys: Experiments and modeling

Academic Journal

Lin, Y.; Xia, G.; Yasuda, H.; Schiekofer, M.

In: Journal of Applied Physics. (Journal of Applied Physics, 7 June 2015, 117(21))

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

Effects of carbon on phosphorus diffusion in SiGe:C and the implications on phosphorus diffusion mechanisms

Academic Journal

Lin, Y.; Xia, G.; Yasuda, H.; Wise, R.; Schiekofer, M.; Benna, B.

In: Journal of Applied Physics. (Journal of Applied Physics, 14 October 2014, 116(14))

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

A highly manufacturable 0.25μm RF technology utilizing a unique SiGe integration.

Conference

Johnson, F.S.; Ai, J.; Dunn, S.; El Kareh, B.; Erdeljac, J.; John, S.; Benaissa, K.; Bellaour, A.; Benna, B.; Hodgson, L.; Hoffleisch, G.; Hutter, L.; Jaumann, M.; Jumpertz, R.; Mercer, M.; Nair, M.; Seitchik, J.; Shen, C.; Schiekofer, M.; Scharnagl, T.

Proceedings of the 2001 BIPOLAR/BiCMOS Circuits & Technology Meeting (Cat. No.01CH37212); 2001, p56-59, 4p

Full Text (IEEE) Find it@PNU

Effect of thermal nitridation on phosphorus diffusion in SiGe and SiGe:C and its implication on diffusion mechanisms

Conference

Lin, Y.; Xia, G.; Yasuda, H.; Ho, H.; Schiekofer, M.; Benna, B.; Wise, R.

In: 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. (2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014, 2014, :95-96)

Full Text (IEEE) Scopus Find it@PNU

Enhanced 5V complementary sige bicmos technology by separate NPN/PNP emitter formation

Conference

El-Kareh, B.; Balster, S.; Yasuda, H.; Steinmann, P.; Nehrer, W.; Hou, F.; Dirnecker, C.; Garbe, M.; Haeusler, A.; Menz, P.; Scharnagl, T.; Schiekofer, M.; Schwekendiek, H.; Waitschull, M.; Weijtmans, J.W.; Willis, C.; Cressler, J.; Zhao, E.

In: Proceedings - Electrochemical Society, SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium. (Proceedings - Electrochemical Society, 2004, 7:53-60)

Scopus Find it@PNU

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