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발행년	- (예 : 2010-2015)

전체선택

Systematic Search for Stabilizing Dopants in ZrO₂ and HfO₂ Using First-Principles Calculations

Academic Journal

Harashima, Y.; Koga, H.; Ni, Z.; Yonehara, T.; Katouda, M.; Notake, A.; Matsui, H.; Moriya, T.; Si, M.K.; Hasunuma, R.; Uedono, A.; Shigeta, Y.

IEEE Transactions on Semiconductor Manufacturing IEEE Trans. Semicond. Manufact. Semiconductor Manufacturing, IEEE Transactions on. 36(4):543-546 Nov, 2023

Full Text (IEEE) Web of Science JCR 저널정보 Scopus Find it@PNU

Finite temperature effects on the structural stability of Si-doped HfO2 using first-principles calculations

Academic Journal

Harashima, Y.; Si, M.K.; Shigeta, Y.; Koga, H.; Yonehara, T.; Katouda, M.; Ni, Z.; Matsui, H.; Notake, A.; Moriya, T.; Hasunuma, R.; Uedono, A.

In: Applied Physics Letters. (Applied Physics Letters, 26 June 2023, 122(26))

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

Vacancy-type defects in TiN/ZrO2/TiN capacitors probed by monoenergetic positron beams

Academic Journal

Uedono, A.; Takahashi, N.; Hasunuma, R.; Shigeta, Y.; Harashima, Y.; Ni, Z.; Matsui, H.; Kubo, A.; Notake, A.; Moriya, T.; Michishio, K.; Oshima, N.; Ishibashi, S.

In: Thin Solid Films. (Thin Solid Films, 30 November 2022, 762)

Full Text (ScienceDirect 종량제) Web of Science JCR 저널정보 Scopus Find it@PNU

Finite temperature effects on the structural stability of Si-doped HfO2 using first-principles calculations.

Academic Journal

Harashima, Y.; Koga, H.; Ni, Z.; Yonehara, T.; Katouda, M.; Notake, A.; Matsui, H.; Moriya, T.; Si, M. K.; Hasunuma, R.; Uedono, A.; Shigeta, Y.

Applied Physics Letters. 6/26/2023, Vol. 122 Issue 26, p1-6. 6p.

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

Systematic search for stabilizing dopants in ZrO2and HfO2using first-principles calculations

Conference

Harashima, Y.; Koga, H.; Yonehara, T.; Katouda, M.; Ni, Z.; Matsui, H.; Notake, A.; Moriya, T.; Si, M.K.; Shigeta, Y.; Hasunuma, R.; Uedono, A.

In: IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, 2022 International Symposium on Semiconductor Manufacturing, ISSM 2022 - Proceedings. (IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings, 2022, 2022-December)

Full Text (IEEE) Scopus Find it@PNU

Impact of Cation Vacancies on Leakage Current on TiN/ZrO2/TiN Capacitors Studied by Positron Annihilation

Conference

Uedono, A.; Takahashi, N.; Hasunuma, R.; Shigeta, Y.; Harashima, Y.; Ni, Z.; Matsui, H.; Kubo, A.; Notake, A.; Moriya, T.; Michishio, K.; Oshima, N.; Ishibashi, S.

Full Text (IEEE) Scopus Find it@PNU

Metabolism of bisphenol A by hyper lignin-degrading fungus Phanerochaete sordida YK-624 under non-ligninolytic condition

Academic Journal

Wang, J.; Tokumoto, T.; Kawagishi, H.; Yamada, Y.; Notake, A.; Todoroki, Y.; Hirai, H.; Dong, J.; Thomas, P.

In: Chemosphere. (Chemosphere, August 2014, 109:128-133)

Full Text (ScienceDirect) Full Text (ScienceDirect 종량제) Web of Science JCR 저널정보 Scopus Find it@PNU

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