학술논문

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발행년	- (예 : 2010-2015)

Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond

Academic Journal

Masten, H.N.; Lundh, J.S.; Feygelson, T.I.; Spencer, J.A.; Hite, J.K.; Pennachio, D.J.; Jacobs, A.G.; Mastro, M.A.; Feigelson, B.N.; Pate, B.B.; Hobart, K.D.; Anderson, T.J.; Tadjer, M.J.; Sasaki, K.; Kuramata, A.; Cheng, Z.; Liao, P.-Y.; Ye, P.; Graham, S.

In: Applied Physics Letters. (Applied Physics Letters, 8 April 2024, 124(15))

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging

Academic Journal

Lundh, J.S.; Masten, H.N.; Pavlidis, G.; Sasaki, K.; Konishi, K.; Kuramata, A.; Centrone, A.; Spencer, J.A.; Currie, M.; Jacobs, A.G.; Hobart, K.D.; Anderson, T.J.; Tadjer, M.J.

In: Applied Physics Letters. (Applied Physics Letters, 29 January 2024, 124(5))

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

Experimental determination of critical thickness limitations of (010) β-(AlxGa1−x)2O3 heteroepitaxial films

Academic Journal

Lundh, J.S.; Liao, M.; Masten, H.N.; Hite, J.K.; Mastro, M.A.; Mahadik, N.A.; Hobart, K.D.; Anderson, T.J.; Tadjer, M.J.; Huynh, K.; Olsen, W.; Pan, K.; Goorsky, M.; Sasaki, K.; Konishi, K.; Kuramata, A.

In: Applied Physics Letters. (Applied Physics Letters, 27 November 2023, 123(22))

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Operation of NiO/β-(Al0.21Ga0.79)2O3/Ga2O3 Heterojunction Lateral Rectifiers at up to 225 °C

Academic Journal

Wan, H.-H.; Li, J.-S.; Chiang, C.-C.; Xia, X.; Ren, F.; Masten, H.N.; Lundh, J.S.; Spencer, J.A.; Jacobs, A.G.; Hobart, K.; Tadjer, M.J.; Alema, F.; Osinsky, A.; Pearton, S.J.

In: ECS Journal of Solid State Science and Technology. (ECS Journal of Solid State Science and Technology, July 2023, 12(7))

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NiO/β-(Al xGa1- x )2O3/Ga2O3heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

Academic Journal

Wan, H.-H.; Li, J.-S.; Chiang, C.-C.; Xia, X.; Ren, F.; Masten, H.N.; Lundh, J.S.; Spencer, J.A.; Jacobs, A.G.; Hobart, K.; Tadjer, M.J.; Alema, F.; Osinsky, A.; Pearton, S.J.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. (Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, May 2023, 41(3))

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Ternary Alloy Rare-Earth Scandate as Dielectric for $\beta$ -Ga2O3 MOS Structures

Academic Journal

Masten, H.N.; Phillips, J.D.; Peterson, R.L.

IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 66(6):2489-2495 Jun, 2019

Full Text (IEEE) Web of Science JCR 저널정보 Scopus Find it@PNU

Effects of high temperature annealing on the atomic layer deposited HfO2/β-Ga2O3(010) interface

Academic Journal

Masten, H.N.; Peterson, R.L.; Phillips, J.D.

In: Journal of Applied Physics. (Journal of Applied Physics, 21 January 2022, 131(3))

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Charge trapping and recovery in ALD HfO2/β-Ga2O3(010) MOS capacitors

Academic Journal

Masten, H.N.; Phillips, J.D.; Peterson, R.L.

In: Semiconductor Science and Technology. (Semiconductor Science and Technology, April 2021, 36(4))

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AlN-capped β-(AlxGa1-x)2O3/Ga2O3heterostructure field-effect transistors for near-junction thermal management of next generation power devices

Conference

Lundh, J.S.; Masten, H.N.; Sasaki, K.; Konishi, K.; Kuramata, A.; Jacobs, A.G.; Spencer, J.; Gallagher, J.; Koehler, A.D.; Hobart, K.D.; Tadjer, M.J.; Cheng, Z.; Chen, L.; Graham, S.

In: Device Research Conference - Conference Digest, DRC, 2022 Device Research Conference, DRC 2022. (Device Research Conference - Conference Digest, DRC, 2022, 2022-June)

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