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발행년	- (예 : 2010-2015)

Emergent Bilingual Students and Digital Multimodal Composition: A Systematic Review of Research in Secondary Classrooms

Academic Journal

Smith, B.E.; Pacheco, M.B.; Khorosheva, M.

In: Reading Research Quarterly. (Reading Research Quarterly, January/February/March 2021, 56(1):33-52)

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The Effects of Aluminum Gettering and Thermal Treatments on the Light-Emitting Properties of Dislocation Structures in Self-Implanted Silicon Subjected to Boron Ion Doping

Academic Journal

Tereshchenko, A.; Khorosheva, M.; Korolev, D.; Mikhaylov, A.; Belov, A.; Nikolskaya, A.; Tetelbaum, D.

In: Physica Status Solidi (A) Applications and Materials Science. (Physica Status Solidi (A) Applications and Materials Science, 1 September 2019, 216(17))

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Interaction of Chromium Atoms with Dislocations and as-Grown Vacancy Complexes and its Impact on the Electronic Properties of FZ-Si

Academic Journal

Kveder, V.; Khorosheva, M.

In: Physica Status Solidi (B) Basic Research. (Physica Status Solidi (B) Basic Research, August 2019, 256(8))

Full Text (Wiley Journals) Full Text (Wiley-DB) Web of Science JCR 저널정보 Scopus Find it@PNU

Structures and electronic properties of defects on the borders of silicon bonded wafers.

Academic Journal

Tereshchenko, A.; Steinman, E.; Mazilkin, A.; Khorosheva, M.; Kononchuk, O.

Russian Microelectronics. Dec2015, Vol. 44 Issue 8, p585-589. 5p.

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Multicrystalline silicon production for solar cell applications by continuous induction melting in cold crucible

Academic Journal

Beringov, S.; Shkulkov, A.; Cherpak, Y.; Vlasiuk, M.; Vlasenko, T.; Buchovska, I.; Kveder, V.; Khorosheva, M.

In: Physica Status Solidi (C) Current Topics in Solid State Physics. (Physica Status Solidi (C) Current Topics in Solid State Physics, January 2013, 10(1):24-27)

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Interplay of Ni and Au Atoms with Dislocations and Vacancy Defects Generated by Moving Dislocations in Si

Periodical

Kveder, V.; Khorosheva, M.; Seibt, Michael

Diffusion and Defect Data Part B: Solid State Phenomena; October 2015, Vol. 242 Issue: 1 p147-154, 8p

Full Text (ProQuest Central) Find it@PNU

Concerning vacancy defects generated by moving dislocations in Si

Conference

Kveder, V.; Khorosheva, M.; Seibt, M.

In: Materials Today: Proceedings. (Materials Today: Proceedings, 2018, 5(6):14757-14764)

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Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations in Cz-Si

Periodical

Kveder, Vitaly V.; Orlov, Valeri I.; Khorosheva, M.; Seibt, Michael

Diffusion and Defect Data Part B: Solid State Phenomena; October 2007, Vol. 131 Issue: 1 p175-182, 8p

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Influence of the dislocation travel distance on the DLTS spectra of dislocations in Cz-Si

Book

Kveder, V.; Orlov, V.; Khorosheva, M.; Seibt, M.

In: Gettering and Defect Engineering in Semiconductor Technology XII - GADEST 2007 - Proceedings of the 12th International Autumn Meeting. (Solid State Phenomena, 2008, 131-133:175-182)

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