학술논문

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발행년	- (예 : 2010-2015)

Materials Technology Co-Optimization of Self-Aligned Gate Contact for Advanced CMOS Technology Nodes

Conference

Pal, A.; Ferrell, J.; Sachid, A.; Bazizi, E. M.; Cui, D.; Wang, A.; Cogorno, M.; Bhatnagar, A.; Ingle, N.; Xu, Y.; Lei, W.; Lei, Y.; Gelatos, A.; Ha, T. H.; Kashefizadeh, K.; Seutter, S. M.; Sato, T. E.; Brown, B.; Mikhaylichenko, K.; Lee, C.; Fung, N.; Xu, W.; Kawasaki, M.; Luu, T.; Wang, P.; Colombeau, B.; Alexander, B.; Hwang, D.; Natarajan, S.; Ayyagari, B.

2020 IEEE Symposium on VLSI Technology VLSI Technology, 2020 IEEE Symposium on. :1-2 Jun, 2020

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Highly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures

Conference

Breil, N.; Carr, A.; Kuratomi, T.; Lavoie, C.; Chen, I.-C.; Stolfi, M.; Chiu, K. D.; Wang, W.; Van Meer, H.; Sharma, S.; Hung, R.; Gelatos, A.; Jordan-Sweet, J.; Levrau, E.; Loubet, N.; Chao, R.; Ye, J.; Ozcan, A.; Surisetty, C.; Chudzik, M.

2017 Symposium on VLSI Technology VLSI Technology, 2017 Symposium on. :T216-T217 Jun, 2017

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Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10−9 Ω-cm2 using ultrathin TiO2−x interlayer between metal and silicon

Conference

Agrawal, A.; Lin, J.; Zheng, B.; Sharma, S.; Chopra, S.; Wang, K.; Gelatos, A.; Mohney, S.; Datta, S.

2013 Symposium on VLSI Technology VLSI Technology (VLSIT), 2013 Symposium on. :T200-T201 Jun, 2013

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A Manufacturable Chemical-Mechanical Polish Technology With A Novel Low-Permittivity Stop-Layer For Oxide Polishing

Conference

Poon, S.; Gelatos, A.; Perera, A.H.; Hoffman, M.

Symposium 1993 on VLSI Technology VLSI Technology, 1993. Digest of Technical Papers. 1993 Symposium on. :115-116 1993

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Transient photocapacitance and capacitance studies of interface and bulk states in metal / a-SiN1.6:H / a-Si:H / c-Si devices

Academic Journal

Godet, C.; Kanicki, J.; Gelatos, A.

In: Journal of Non-Crystalline Solids. (Journal of Non-Crystalline Solids, 1991, 137-138(PART 2):1051-1054)

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

Stretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride

Academic Journal

Kanicki, J.; Sankaran, M.; Gelatos, A.; Crowder, M.S.; Tober, E.D.

In: Applied Physics Letters. (Applied Physics Letters, 1990, 57(7):698-700)

Web of Science JCR 저널정보 Scopus Find it@PNU

Light-induced effects in hydrogenated amorphous nitrogen-rich silicon nitride films

Academic Journal

Kanicki, J.; Jousse, D.; Gelatos, A.; Crowder, M.S.

In: Journal of Non-Crystalline Solids. (Journal of Non-Crystalline Solids, 2 December 1989, 114(PART 2):612-614)

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10-9 ω-cm2 using ultrathin TiO 2-x interlayer between metal and silicon

Conference

Agrawal, A.; Lin, J.; Wang, K.; Mohney, S.; Datta, S.; Zheng, B.; Sharma, S.; Chopra, S.; Gelatos, A.

In: Digest of Technical Papers - Symposium on VLSI Technology, 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers. (Digest of Technical Papers - Symposium on VLSI Technology, 2013, :T200-T201)

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Effect of NH3 thermal treatment on an atomic layer deposited on tungsten films and formation of W-B-N

Academic Journal

Byun, J.S.; Mak, A.; Zhang, A.; Yoon, A.; Zhang, T.; Gelatos, A.; Jackson, R.; Thakur, R.; Lee, S.-Y.; Kim, H.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, July 2003, 21(4):1466-1471)

Scopus Find it@PNU

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