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발행년	- (예 : 2010-2015)

전체선택

Microstructure modified HfO/sub 2/ using Zr addition with Ta/sub x/ C/sub y/ gate for improved device performance and reliability

Conference

Hegde, R.I.; Triyoso, D.H.; Tobin, P.J.; Kalpat, S.; Ramon, M.E.; Tseng, H.-H.; Schaeffer, J.K.; Luckowski, E.; Taylor, W.J.; Capasso, C.C.; Gilmer, D.C.; Moosa, M.; Haggag, A.; Raymond, M.; Roan, D.; Nguyen, J.; La, L.B.; Hebert, E.; Cotton, R.; Wang, X.-D.; Zollner, S.; Gregory, R.; Werho, D.; Rai, R.S.; Fonseca, L.; Stoker, M.; Tracy, C.; Chan, B.W.; Chiu, Y.H.; White, B.E., Jr.

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :35-38 2005

Full Text (IEEE) Find it@PNU

Defect passivation with fluorine in a Ta/sub x/C/ high-K gate stack for enhanced device threshold voltage stability and performance

Conference

Tseng, H.-H.; Tobin, P.J.; Hebert, E.A.; Kalpat, S.; Ramon, M.E.; Fonseca, L.; Jiang, Z.X.; Schaeffer, J.K.; Hegde, R.I.; Triyoso, D.H.; Gilmer, D.C.; Taylor, W.J.; Capasso, C.C.; Adetutu, O.; Sing, D.; Conner, J.; Luckowski, E.; Chan, B.W.; Haggag, A.; Backer, S.; Noble, R.; Jahanbani, M.; Chiu, Y.H.; White, B.E.

Full Text (IEEE) Find it@PNU

Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/ stack

Conference

Tseng, H.-H.; Capasso, C.C.; Schaeffer, J.K.; Hebert, E.A.; Tobin, P.J.; Gilmer, D.C.; Triyoso, D.; Ramon, M.E.; Kalpat, S.; Luckowski, E.; Taylor, W.J.; Jeon, Y.; Adetutu, O.; Hegde, R.I.; Noble, R.; Jahanbani, M.; El Chemali, C.; White, B.E.

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :821-824 2004

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Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO2 stack.

Conference

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p821-824, 4p

Full Text (IEEE) Find it@PNU

Microstructure modified HfO2 using Zr addition with Ta xCy gate for improved device performance and reliability

Conference

In: Technical Digest - International Electron Devices Meeting, IEDM, IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. (Technical Digest - International Electron Devices Meeting, IEDM, 2005, 2005:35-38)

Full Text (IEEE) Scopus Find it@PNU

Defect passivation with fluorine in a TaxCy/High-K gate stack for enhanced device threshold voltage stability and performance

Conference

Tseng, H.-H.; Tobin, P.J.; Hebert, E.A.; Kalpat, S.; Ramón, M.E.; Fonseca, L.; Jiang, Z.X.; Schaeffer, J.K.; Hegde, R.I.; Triyoso, D.H.; Gilmer, D.C.; Taylor, W.J.; Capasso, C.C.; Adetutu, O.; Sing, D.; Conner, J.; Luckowski, E.; Chan, B.W.; Haggag, A.; Backer, S.; Noble, R.; Jahanbani, M.; White, B.E.; Chiu, Y.H.

Full Text (IEEE) Scopus Find it@PNU

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