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발행년	- (예 : 2010-2015)

Use of a buried loop layer as a detector of interstitial flux during oxidation of SiGe heterostructures

Academic Journal

Martin, T.P.; Aldridge, H.L.; Jones, K.S.; Camillo-Castillo, R.A.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. (Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1 March 2017, 35(2))

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

Activation of Si implants into InAs characterized by Raman scattering

Academic Journal

Lind, A.G.; Martin, T.P.; Kennon, E.L.; Truong, V.Q.; Aldridge, H.L.; Jones, K.S.; Sorg, V.C.; Hatem, C.; Thompson, M.O.

In: Journal of Applied Physics. (Journal of Applied Physics, 7 March 2016, 119(9))

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

Fermi-level effects on extended defect evolution in Si+ and P+ implanted In0.53Ga0.47As

Academic Journal

Lind, A.G.; Aldridge, H.L.; Jones, K.S.; Bomberger, C.C.; Zide, J.M.O.; Hatem, C.

In: ECS Journal of Solid State Science and Technology. (ECS Journal of Solid State Science and Technology, 2016, 5(4):P3073-P3077)

Full Text (IOP) Web of Science JCR 저널정보 Scopus Find it@PNU

Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As

Academic Journal

Lind, A.G.; Aldridge, H.L.; Jones, K.S.; Hatem, C.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. (Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 1 September 2015, 33(5))

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As

Academic Journal

Lind, A.G.; Aldridge, H.L.; Jones, K.S.; Bomberger, C.C.; Zide, J.M.O.; Hatem, C.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. (Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, March 2015, 33(2))

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

Concentration-dependent diffusion of ion-implanted silicon in In 0.53Ga0.47As

Academic Journal

Aldridge, H.L.; Lind, A.G.; Law, M.E.; Jones, K.S.; Hatem, C.

In: Applied Physics Letters. (Applied Physics Letters, 28 July 2014, 105(4))

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

High performance SiGe HBT performance variability learning by utilizing neural networks and technology computer aided design

Conference

Aldridge, H.L.; Johnson, J.B.; Krishnasamy, R.; Jain, V.; Mishra, R.; Dongmo, P.; Raghunathan, U.; Pekarik, J.

In: ECS Transactions, PRiME 2020: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 9. (ECS Transactions, 2020, 98(5):127-134)

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Factors affecting TBC furnace cycle lifetime: Temperature, environment, structure and composition

Conference

Pint, B.A.; Haynes, J.A.; Lance, M.J.; Aldridge, H.L.; Viswanathan, V.; Dwivedi, G.; Sampath, S.

In: Proceedings of the International Symposium on Superalloys, SUPERALLOYS 2016 - Proceedings of the 13th International Symposium on Superalloys. (Proceedings of the International Symposium on Superalloys, 2016, 2016-January:727-734)

Scopus Find it@PNU

Annealing effects on the electrical activation of Si dopants in InGaAs

Conference

Lind, A.G.; Aldridge, H.L.; Jones, K.S.; Bomberger, C.C.; Zide, J.M.O.; Hatem, C.

In: ECS Transactions, State-of-the-Art Program on Compound Semiconductors 57, SOTAPOCS 2015. (ECS Transactions, 2015, 66(7):23-27)

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