학술논문

Impact of Cone-Shape-Patterned Sapphire Substrate and Temperature on the Epitaxial Growth of p-GaN via MOCVD
Document Type
Journal
Source
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE; JUL 2019, 216 14, p1900026 5p.
Subject
Language
English
ISSN
18626319