학술논문

Investigation of a Novel Enhancement-Mode Al0.25Ga0.75N/AlN/AlxGa(1-x)N/GaN MIS-HEMT for High V-th and Low R-on,R-sp
Document Type
Journal
Source
IEEE TRANSACTIONS ON ELECTRON DEVICES; MAY 15 2023, 7p.
Subject
Language
English
ISSN
15579646