학술논문

Investigation of strain-relaxed SiGe thin film grown on ion-implanted Si compliant substrate

Document Type

Journal

Author

Source

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS; OCT 2005, 239 4, p433-p439, 7p.

Subject

Language

English

ISSN

0168583X

이메일

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