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Characteristics of the full CMOS SRAM cell using body-tied TG MOSFETs (bulk FinFETs)

Document Type

Journal

Author

Park, TS; Cho, HJ; Choe, JD; Han, SY; Park, D; Kim, K; Yoon, E; Lee, JH

Source

IEEE TRANSACTIONS ON ELECTRON DEVICES; MAR 2006, 53 3, p481-p487, 7p.

Subject

Language

English

ISSN

15579646

Online Access

Full Text (IEEE) Web of Science JCR 저널정보 Scopus Find it@PNU

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