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Investigation of the Reverse Leakage Behavior and Substrate Defects in Vertical GaN Schottky and PIN Diodes

Document Type

Journal

Author

Wang, Yekan; Liao, Michael E.; Huynh, Kenny; Olsen, William; Gallagher, James C.; Anderson, Travis J.; Huang, Xianrong; Wojcik, Michael J.; Goorsky, Mark S.

Source

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY; JUN 1 2022, 11 6, p065006 6p.

Subject

Language

English

ISSN

21628777

Online Access

Full Text (IOP) Web of Science JCR 저널정보 Scopus Find it@PNU

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