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Enhancement-mode vertical (100) beta-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm(-1)

Document Type

Journal

Author

Tetzner, Kornelius; Klupsch, Michael; Popp, Andreas; Bin Anooz, Saud; Chou, Ta-Shun; Galazka, Zbigniew; Ickert, Karina; Matalla, Mathias; Unger, Ralph-Stephan; Treidel, Eldad Bahat; Wolf, Mihaela; Trampert, Achim; Wuerfl, Joachim; Hilt, Oliver

Source

JAPANESE JOURNAL OF APPLIED PHYSICS; JUN 1 2023, 62 SF, pSF1010 5p. Supplement: F

Subject

Language

English

ISSN

13474065

Online Access

Full Text (IOP) Web of Science JCR 저널정보 Scopus Find it@PNU

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