학술논문

Simulation of the DC and the millimeter-wave characteristics of 0.1-mu m offset Gamma-shaped gate In(x)Ga1-xAs/ln(0.52)Al(0.48)As/GaAs MHEMTs with various InxGa1-xAs channels
Document Type
Journal
Source
JOURNAL OF THE KOREAN PHYSICAL SOCIETY; FEB 2004, 44 2, p408-p417, 10p.
Subject
Language
English
ISSN
03744884