학술논문
Boltzmann Switching MoS2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott Limit
Document Type
Journal
Author
Kim, Yeon Ho; Jiang, Wei; Lee, Donghun; Moon, Donghoon; Choi, Hyun-Young; Shin, June-Chul; Jeong, Yeonsu; Kim, Jong Chan; Lee, Jaeho; Huh, Woong; Han, Chang Yong; So, Jae-Pil; Kim, Tae Soo; Kim, Seong Been; Koo, Hyun Cheol; Wang, Gunuk; Kang, Kibum; Park, Hong-Gyu; Jeong, Hu Young; Im, Seongil; Lee, Gwan-Hyoung; Low, Tony; Lee, Chul-Ho
Source
Subject
Language
English
ISSN
15214095