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Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications

Document Type

Journal

Author

Rasheed, Umbreen; Ryu, Hojeong; Mahata, Chandreswar; Khalil, Rana M. Arif; Imran, Muhammad; Rana, Anwar Manzoor; Kousar, Farhana; Kim, Boram; Kim, Yoon; Cho, Seongjae; Hussain, Fayyaz; Kim, Sungjun

Source

JOURNAL OF ALLOYS AND COMPOUNDS; OCT 5 2021, 877 p160204 10p.

Subject

Language

English

ISSN

18734669

Online Access

Full Text (ScienceDirect) Web of Science JCR 저널정보 Scopus Find it@PNU

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