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Defect-free ultra-shallow source/drain extension using spin-on-dopants for deep submicron SOI MOSFET applications

Document Type

Journal

Author

Yang, JH; Oh, JH; Cho, WJ; Lee, SJ; Im, KJ; Park, K

Source

JOURNAL OF THE KOREAN PHYSICAL SOCIETY; FEB 2004, 44 2, p423-p426, 4p.

Subject

Language

English

ISSN

03744884

Online Access

Web of Science JCR 저널정보 Scopus Find it@PNU

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