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Simulation of correlated diffusion of Si and B in thermally grown SiO2

Document Type

Journal

Author

Uematsu, M; Kageshima, H; Takahashi, Y; Fukatsu, S; Itoh, KM; Shiraishi, K

Source

JOURNAL OF APPLIED PHYSICS; NOV 15 2004, 96 10, p5513-p5519, 7p.

Subject

Language

English

ISSN

00218979

Online Access

Full Text (AIP) Web of Science JCR 저널정보 Scopus Find it@PNU

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