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Properties of the GaAs oxide layer grown by the liquid-phase chemical-enhanced technique on the S-passivated GaAs surface

Document Type

Journal

Author

Chou, DW; Lou, RF; Wang, HH; Wang, YH; Houng, MP

Source

JOURNAL OF ELECTRONIC MATERIALS; JAN 2002, 31 1, p71-p75, 5p.

Subject

Language

English

ISSN

03615235

Online Access

Full Text (ProQuest Central) Full Text (Springer-Archive) Web of Science JCR 저널정보 Scopus Find it@PNU

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