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Effect of source extension junction depth and substrate doping concentration on I-MOS device characteristics

Document Type

Journal

Author

Choi, WY; Song, JY; Lee, JD; Park, BG

Source

IEEE TRANSACTIONS ON ELECTRON DEVICES; MAY 2006, 53 5, p1282-p1285, 4p.

Subject

Language

English

ISSN

00189383

Online Access

Full Text (IEEE) Web of Science JCR 저널정보 Scopus Find it@PNU

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