학술논문
High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
Document Type
Author
Raeissi, Bahman, 1979; Piscator, Johan, 1977; Engström, Olof, 1943; Hall, S.; Buiu, O.; Lemme, M.C.; Gottlob, H.D.B.; Hurley, P.K.; Cherkaoui, K.; Osten, H.J.
Source
Solid-State Electronics. 52(9):1274-1279
Subject
Language
English
ISSN
0038-1101
Abstract
Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 preparedby molecular beam epitaxy (MBE) and atomic layer deposition (ALD), and for HfO2 prepared byreactive sputtering, by measuring the frequency dependence of Metal Oxide Semiconductor (MOS) capacitance.The capture cross sections are found to be thermally activated and to increase steeply with theenergy depth of the interface electron states. The methodology adopted is considered useful for increasingthe understanding of high-k-oxide/silicon interfaces.