학술논문

Bonding and stabilities of small silicon clusters: A theoretical study of Si/sub 7/--Si/sub 10/
Document Type
Journal Article
Author
Source
J. Chem. Phys.; (United States); 89:4
Subject
74 ATOMIC AND MOLECULAR PHYSICS SILICON
AGGLOMERATION
CHEMICAL BONDS
MOLECULAR STRUCTURE
ELECTRON CORRELATION
GEOMETRY
MOLECULES
PHOTOELECTRON SPECTROSCOPY
PHOTOIONIZATION
SPECTRA
STABILITY
CORRELATIONS
ELECTRON SPECTROSCOPY
ELEMENTS
IONIZATION
MATHEMATICS
SEMIMETALS
SPECTROSCOPY 640302* -- Atomic, Molecular & Chemical Physics-- Atomic & Molecular Properties & Theory
Language
English
Abstract
Ab initio calculations have been performed to study the structures and energies of intermediate-sized silicon clusters (Si/sub n/, n = 7--10). All geometries have been optimized at the Hartree--Fock (HF) level of theory with the polarized 6-31G* basis set. The harmonic vibrational frequencies have been evaluated at the HF/6-31G* level of theory. Electron correlation effects have been included by means of fourth order Moeller--Plesset perturbation theory. The most stable structure for Si/sub 7/ is a pentagonal bipyramid and the lowest energy calculated structures for Si/sub 8/--Si/sub 10/ correspond to capped octahedral or prismatic geometrical arrangements. The evolution of the cluster geometries with increasing size is discussed. Clusters containing four, six, seven, and ten atoms have been identified as ''magic numbers'' for small silicon clusters, both theoretically and experimentally. The hybridization and bonding in small silicon clusters is discussed. Our results are used to interpret the recent photoelectron spectra of negative silicon cluster ions.