부산대학교 도서관

Irradiation of n-type bulk Hg/sub 1//sub -//subx/Cd/subx/Te (xapprox. =0.2) with 5-MeV electrons at low temperatures produces an increase in the carrier density and variation in the carrier mobility. Some of the samples that were irradiated showed an initial increase in mobility with fluence, followed by a decrease, whereas others showed a montonically decreasing mobility. Isochronal annealing of all of the samples caused the mobility--vs--carrier-density curves to roughly retrace themselves as the carrier density decreased with annealing. However, for a given carrier density, the mobility on the annealing leg of the curves was consistently larger than the mobility on the irradiation leg. In this paper, these trends are explained by a combination of degeneracy, nonparabolic bands, and different degrees of initial compensation in the samples. Analysis of the data permits a qualitative determination of the initial compensation, the relative introduction rates for donor and acceptor states by the radiation, and their relative annealing rates. The mobility analysis is also shown to be consistent with the lifetime behavior of the samples. (AIP)