부산대학교 도서관

The purpose of this study was to develop a time-efficient simulation technique for modeling the energy deposition by incident protons in modern integrated circuits. Such a technique would allow the prediction of digital memory vulnerability to the proton environments typical of satellite orbits. In order to avoid the excessive computer time required by many proton effects simulators, a stochastic method was chosen to model the various physical effects responsible for energy deposition by incident protons. Using probability density functions to describe the nuclear reactions responsible for most proton-induced memory upsets, the simulator determines the probability of a proton hit depositing the energy necessary for circuit destabilization. This factor is combined with various circuit parameters to determine the expected error-rate in a given proton environment. An analysis of transient or dose-rate effects is also performed. A comparison to experimental energy-deposition data proves the simulator to be quite accurate for predicting the expected number of events in certain integrated circuits.