학술논문
Influence of annealing on the surface-acoustic-wave velocity increase induced by ion implantation in quartz
Document Type
Journal Article
Author
Source
J. Appl. Phys.; (United States); 49:10
Subject
Language
English
Abstract
A surface-acoustic-wave velocity increase is induced by implantation of helium ions at 100 keV in Y- and ST-cut quartz substrates. An important decrease of this velocity variation has been found after an annealing at about 560 /sup 0/C, and it depends on the annealing time. After annealing, the features of the quartz layer perturbed by implantation of 1.3 x 10/sup 16/ /sup 4/He/sup +//cm/sup 2/ are close to those of vitreous silica at room temperature. Experimental and calculated results of the influence of an annealing on the surface wave velocity variation and the density of the perturbed layer are reported and discussed.