학술논문
Characterization of SiO{sub 2}/SiC samples using photoelectron spectroscopy
Document Type
Conference
Author
Source
Conference: 1999 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/05/1999--04/08/1999; Other Information: PBD: 1999; Other Information: In: Wide-band semiconductors for high-power, high-frequency and high-temperature applications -- 1999. Materials Research Society symposium proceedings: Volume 572, by Binari, S.C.; Burk, A.A.; Melloch, M.R.; Nguyen, C. [eds.], 575 pages.
Subject
Language
English
ISSN
0272-9172
Abstract
The results of photoemission studies of SiO{sub 2}/SiC samples for the purpose of revealing presence of any carbon containing by-products at the interface are reported. Two components could be identified in recorded Si 2p and C 1s core level spectra. For Si 2p these were identified to originate from SiO{sub 2} and SiC while for C 1s they were interpreted to originate from graphite like carbon and SiC. The variation in relative intensity of these components with emission angle was first investigated. Thereafter the intensity of the different components were studied after successive Ar{sup +}-sputtering cycles. Both experiments showed contribution from graphite like carbon on top of the oxide but not at the interface.