학술논문

PERFORMANCE STUDIES OF CDZNTE DETECTOR BY USING A PULSE SHAPE ANALYSIS.
Document Type
Conference
Author
Source
Conference: SPIE 50TH ANNUAL MEETING; SAN DIEGO, CA; 20050731 through 20050804
Subject
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE CDTE SEMICONDUCTOR DETECTORS
PULSE SHAPERS
CHARGE COLLECTION
PERFORMANCE
ELECTRICAL PROPERTIES
CADMIUM TELLURIDES
ZINC TELLURIDES
Language
English
Abstract
Pulse shape analysis is proved to be a powerful tool to characterize the performance of CdZnTe devices and understand their operating principles. It allows one to investigate the device configurations, electron transport properties, effects governing charge collection, electric-field distributions, signal charge formation, etc. This work describes an application of different techniques based on the pulse shape measurements to characterize pixel, coplanar-grid, and virtual Frisch-grid devices and understand the electronic properties of CZT material provided by different vendors. We report new results that may explain the performance limits of these devices.