부산대학교 도서관

It has been found that “hot” high-fluence Zn+ implantation leads to the formation of the extended layer with zinc-based nanoclusters of size up to 10 nm in SiO2 film. The precipitate’s crystalline nature is confirmed by HRTEM studies. Post-implantation annealing at 700°C for 60 min leads to Zn atoms redistribution in implanted region, formation of the larger crystallites (up to 25 nm) and the small Zn nanoparticles surrounded by the oxide shells (core (Zn)/shell(ZnO) structure) as well as the voids formation at the interface “Zn nanocluster/SiO2 matrix”. The number of the core (Zn)/shell (ZnO) structures and the voids increases after annealing at 700°C for 120 min.