부산대학교 도서관

We demonstrate the first green InGaN/GaN light emitting diode (LED) grown on a planar semipolar \documentclass[12pt]{minimal}\usepackage{amsmath}\usepackage{wasysym}\usepackage{amsfonts}\usepackage{amssymb}\usepackage{amsbsy}\usepackage{mathrsfs}\usepackage{upgreek}\setlength{\oddsidemargin}{-69pt}\begin{document}$$\left( {10\overline 1 \overline 3 } \right)$$\end{document} GaN template. The LED structure is grown by metalorganic chemical vapor deposition (MOCVD), and the 20 μm-thick, specular and optically transparent template is grown by hydride vapor phase epitaxy (HVPE). The fabricated devices have a peak emission wavelength of ~525 nm and demonstrate rectifying behavior, with a low operating voltage of 3.25 V at 20 mA. We observe a small ~7 nm blue-shift in the peak emission wavelength during electroluminescence measurements, over the range 20 to 250 mA. We also see an almost linear increase in the output power from 5 mA to 250 mA, with no appreciable decrease in the external quantum efficiency over the same range. Additionally, we observe evidence of polarization anisotropy in the emission from the semipolar green LEDs.