부산대학교 도서관

In this work, which aims to investigate the capacitance and conductance properties of ZnCo2O4-doped Gelatin, 5% ZnCo2O4-doped Gelatin film was grown on n-type silicon wafer by sol–gel spin coating with the aim of fabricating Al/ZnCo2O4:Gelatin/n-Si Schottky diode. This investigation also explores the series resistance (RS)(Nss)NSS and interface state (RS)(Nss)NSS characteristics of a diode produced with ZnCo2O4:Gelatin interface layer. Electrical measurements were taken in the voltage range of − 5 V and + 2 V and the frequency range of 30 kHz and 1 MHz. The electrical properties of the diodes were characterized from voltage and frequency-dependent measurements. Capacitance–voltage (C-V) and conductance–voltage (G-V) characteristics yielded higher values showing the significance of the interface states. At lower frequencies, the rise in the capacitance value is signed to the interface state density. The values of (RS)(Nss)NSS for 30 kHz and 1 MHz frequency are 10.5 × 1011 and 4.19 × 1011 eV−1 cm−2. It is recommended to use the produced diode as an electronic device.