부산대학교 도서관

Gallium nitride could exhibit strong piezoelectric properties which could be further developed for high frequency devices, telecommunication applications, and many more. In this study, we explored theoretically and experimentally the potential Sezawa guided mode in the groove structure along the GaN/Sapphire interface. Computational analysis with Finite Element Method demonstrates the presence three peaks of particular modes at specifics resonance frequencies and interestingly with high energy confinement inside the GaN. The experimental data of insertion loss peak graph extrapolated from s-parameter measurement showed that the results of frequency response are correspond to three peaks of the particular modes hence validate the computational results. This finding is attributed to the locally resonant mechanism that confines the energy in the periodic structure that prevents radiation of energy. This particular propagation can be exploited to enable the development of Sezawa-GaN platform to be operational in the liquid medium, for sensor and actuator applications.Graphical Abstract: