학술논문
Synthesis and opto-electrical properties of Cu2 NiSnS4 nanoparticles using a facile solid-phase process at low temperature
Document Type
Letter
Author
Source
Optoelectronics Letters. 16(6):401-404
Subject
Language
English
ISSN
1673-1905
1993-5013
1993-5013
Abstract
Cu2 NiSnS4 nanoparticles were prepared for the first time using a facile solid-phase process at a temperature of 180°C. The crystalline structure, morphology and optical properties of the Cu2 NiSnS4 nanoparticles were characterized by means of X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscope (TEM) and ultraviolet-visible (UV-vis) spectrophotometer. The band gap and conversion efficiency of Cu2 NiSnS4 nanoparticles were studied at various temperature. The results showed that the Cu2 NiSnS4 nanoparticles exhibited an optimum band gap of 1.58 eV and a conversion efficiency of 0.64% at 180 °C, indicating that it maybe be useful in low-cost thin film solar cells.