학술논문

Stacking influence on the in-plane magnetic anisotropy in a 2D magnetic system
Document Type
article
Source
Nanoscale. 15(18)
Subject
Physical Sciences
Condensed Matter Physics
Chemical Sciences
Technology
Nanoscience & Nanotechnology
Chemical sciences
Engineering
Physical sciences
Language
Abstract
The magnetization patterns on three atomic layers thick islands of Co on Ru(0001) are studied by spin-polarized low-energy electron microscopy (SPLEEM). In-plane magnetized micrometer wide triangular Co islands are grown on Ru(0001). They present two different orientations correlated with two different stacking sequences which differ only in the last layer position. The stacking sequence determines the type of magnetization pattern observed: the hcp islands present very wide domain walls, while the fcc islands present domains separated by much narrower domain walls. The former is an extremely low in-plane anisotropy system. We estimate the in-plane magnetic anisotropy of the fcc regions to be 1.96 × 104 J m-3 and of the hcp ones to be 2.5 × 102 J m-3.