학술논문
Well Developed Deformation in Si42
Document Type
article
Author
Takeuchi, S; Matsushita, M; Aoi, N; Doornenbal, P; Li, K; Motobayashi, T; Scheit, H; Steppenbeck, D; Wang, H; Baba, H; Bazin, D; Càceres, L; Crawford, H; Fallon, P; Gernhäuser, R; Gibelin, J; Go, S; Grévy, S; Hinke, C; Hoffman, CR; Hughes, R; Ideguchi, E; Jenkins, D; Kobayashi, N; Kondo, Y; Krücken, R; Le Bleis, T; Lee, J; Lee, G; Matta, A; Michimasa, S; Nakamura, T; Ota, S; Petri, M; Sako, T; Sakurai, H; Shimoura, S; Steiger, K; Takahashi, K; Takechi, M; Togano, Y; Winkler, R; Yoneda, K
Source
Physical Review Letters. 109(18)
Subject
Language
Abstract
Excited states in (38,40,42) Si nuclei have been studied via in-beam γ-ray spectroscopy with multinucleon removal reactions. Intense radioactive beams of ^{40}S and (44)S provided at the new facility of the RIKEN Radioactive Isotope Beam Factory enabled γ-γ coincidence measurements. A prominent γ line observed with an energy of 742(8) keV in (42) Si confirms the 2(+) state reported in an earlier study. Among the γ lines observed in coincidence with the 2^{+} → 0+ transition, the most probable candidate for the transition from the yrast 4(+) state was identified, leading to a 4(1)+) energy of 2173(14) keV. The energy ratio of 2.93(5) between the 2(1)+ and 4(1)(+) states indicates well-developed deformation in (42) Si at N = 28 and Z = 14. Also for 38,40)Si energy ratios with values of 2.09(5) and 2.56(5) were obtained. Together with the ratio for (42)Si, the results show a rapid deformation development of Si isotopes from N = 24 to N = 28.