학술논문

Measurements of Single Event Upset in ATLAS IBL
Document Type
article
Source
Journal of Instrumentation. 15(06)
Subject
Engineering
Electrical Engineering
Performance of High Energy Physics Detectors
Radiation damage to electronic components
Radiation-hard electronics
Si microstrip and pad detectors
physics.ins-det
hep-ex
Physical Sciences
Nuclear & Particles Physics
Physical sciences
Language
Abstract
Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulations indicate that SET dominate over SEU on the load line of the memory. Operational issues and mitigation techniques are presented.