학술논문

200 mm sensor development using bonded wafers
Document Type
article
Source
Journal of Instrumentation. 16(02)
Subject
Solid state detectors
Si microstrip and pad detectors
Particle tracking detectors
physics.ins-det
hep-ex
Physical Sciences
Engineering
Nuclear & Particles Physics
Language
Abstract
Sensors fabricated from high resistivity, float zone, silicon material have been the basis of vertex detectors and trackers for the last 30 years. The areas of these devices have increased from a few square cm to > 200m2 for the existing CMS tracker. High Luminosity Large Hadron Collider (HL-LHC), CMS and ATLAS tracker upgrades will each require more than 200 m2 of silicon and the CMS High Granularity Calorimeter (HGCAL) will require more than 600 m2. The cost and complexity of assembly of these devices is related to the area of each module, which in turn is set by the size of the silicon sensors. In addition to large area, the devices must be radiation hard, which requires the use of sensors thinned to 200 microns or less. The combination of wafer thinning and large wafer diameter is a significant technical challenge, and is the subject of this work. We describe work on development of thin sensors on 200 mm wafers using wafer bonding technology. Results of development runs with float zone, Silicon-on-Insulator and Silicon-Silicon bonded wafer technologies are reported.