부산대학교 도서관

We report on the growth, structural and transport properties of zinc-blende CrAs/GaAs/MnAs/GaAs multilayers on GaAs(001) substrates. Structural analyses using in-situ reflection high-energy electron diffraction and exsitu cross-sectional transmission electron microscopy confirmed the realization of a zinc-blende crystal structure. Room temperature Hall measurements reveal that the as-grown multilayer exhibits p-type conductivity with a very low resistivity of 0.052 Ω㎝, a high carrier concentration of 6.2×1019 ㎝?3 and a Hall mobility of 1.8 ㎠/Vs. We also observed a clear decrease of the resistivity in samples after low temperature annealing.